Sputtering and Annealing Graphene Oxide Hole-Transporting Layer for Perovskite Solar Cells

被引：0
|
作者：
Chen, Lung-Chien [1 ]
Lin, Jia-Ching [1 ]
Lee, Kuan-Lin [1 ]
Tseng, Zong-Liang [1 ]
机构：
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei, Taiwan
来源：
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年
关键词：
graphene oxide; sputtering; perovskite solar cells; EFFICIENT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the graphene thin films were deposited by reactive radio-frequency magnetron sputter. Then, the graphene thin film was annealing with different temperature in the atmosphere to form graphene oxide (GO) thin films. The solar cell structure was inverted for ITO/Graphene oxide/ CH3NH3PbI3/PCBM/Ag. Photovolatic conversion efficiency of the cells based on the different graphene oxide morphologies was analyzed by XRD, SEM, PL, TR-PL and UV-Vis absorption spectra. The power conversion efficiency of the best cell was 1.75%
引用
收藏
页码：353 / 355
页数：3
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