ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor

被引：16

作者：

Ding, Xingwei ^{[1
]}

Zhang, Jianhua ^{[2
]}

Zhang, Hao ^{[2
]}

Ding, He ^{[1
]}

Huang, Chuanxin ^{[1
]}

Li, Jun ^{[1
]}

Shi, Weimin ^{[1
]}

Jiang, Xueyin ^{[1
]}

Zhang, Zhilin ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China

[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 11期

基金：

中国国家自然科学基金;

关键词：

IGZO thin-film transistor; ZrO2-Al2O3 bilayer gate insulator; ALD; Bias stability; SEMICONDUCTOR; THICKNESS; OXIDE;

D O I：

10.1016/j.microrel.2014.06.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance InGaZnO (IGZO) thin-film transistor (TFT) with ZrO2-Al2O3 bilayer gate insulator is fabricated. Compared to IGZO-TFT with ZrO2 single gate insulator, its electrical characteristics are significantly improved, specifically, enhancement of I-on/I-off ratios by one order of magnitude, increase of the field-effect mobility (from 9.8 to 14 cm(2)/Vs), reduction of the subthreshold swing from 0.46 to 0.33 V/dec, the maximum density of surface states at the channel-insulator interface decreased from 4.3 x 10(12) to 2.5 x 10(12) cm(-2). The performance enhancements are attributed to the suppression of leakage current, smoother surface morphology, and suppression of charge trapping by using Al2O3 films to modify the high-k ZrO2 dielectric. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2401 / 2405

页数：5

共 21 条

[1] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[2] Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors [J].

Cho, Edward Namkyu ;

Kang, Jung Han ;

Yun, Ilgu .

MICROELECTRONICS RELIABILITY, 2011, 51 (9-11) :1792-1795

[3] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[4] Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics [J].

Dhananjay ;

Krupanidhi, S. B. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)

[5] Influence of the InGaZnO channel layer thickness on the performance of thin film transistors [J].

Ding, Xingwei ;

Zhang, Jianhua ;

Li, Jun ;

Zhang, Hao ;

Shi, Weimin ;

Jiang, Xueyin ;

Zhang, Zhilin .

SUPERLATTICES AND MICROSTRUCTURES, 2013, 63 :70-78

[6] The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric [J].

Hsu, De-Cheng ;

Chang, Ingram Yin-ku ;

Wang, Ming-Tsong ;

Juan, Pi-Chun ;

Wang, Y. L. ;

Lee, Joseph Ya-min .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[7] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[8] Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress [J].

Jo, Chunhyung ;

Jun, Sungwoo ;

Kim, Woojoon ;

Hur, Inseok ;

Bae, Hagyoul ;

Choi, Sung-Jin ;

Kim, Dae Hwan ;

Kim, Dong Myong .

APPLIED PHYSICS LETTERS, 2013, 102 (14)

[9]

Kim DH, 2011, APPL PHYS LETT, V99, P16210

[10] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

← 1 2 3 →