Hydrogen passivation of nitrogen in 6H-SiC

被引：9
作者：
Theys, B
Gendron, F
Porte, C
Bringuier, E
Dolin, C
机构：
[1] CNRS, Phys Solides Bellevue Lab, F-92195 Meudon, France
[2] Univ Paris 06, URA 800 CNRS, F-75252 Paris 05, France
[3] Thomson LCR, UMR 137 CNRS, F-91400 Orsay, France
来源：
JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 12期
关键词：
D O I：
10.1063/1.366525
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
N-doped 6H-SiC wafers have been annealed in hot hydrogen for two doping levels, corresponding to n-(n similar to 10(17) cm(-3)) and n(+)-type (n similar to 10(19) cm(-3)) material. Electron spin resonance shows little passivation of N by hydrogen in n-type material, where secondary-ion-mass spectroscopy shows better penetration of deuterium. Both observations are accounted for in terms of Fermi-level control of the hydrogen charge state. (C) 1997 American Institute of Physics.
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页码：6346 / 6347
页数：2
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