Graphene Nanoribbon Devices and Quantum Heterojunction Devices

被引：0

作者：

Kim, Philip ^{[1
,2
]}

Han, Melinda Y. ^{[2
]}

Young, Andrea F. ^{[1
]}

Meric, Inane ^{[3
]}

Shepard, Kenneth L. ^{[3
]}

机构：

[1] Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA

[2] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricate lithographically patterned graphene nanoribbon structures. The sizes of these energy gaps estimated from the conductance in the nonlinear response regime indicate that the gap is scaling inversely proportional to the width of the ribbons. The temperature dependent conductance measurements suggest the substantial amount of edge disorders in the graphene nanoribbons. We also fabricate the lateral graphene heterojunction devices employing the local top gate structures. Quantum conductance oscillations are observed in these devices.

引用

页码：220 / +

页数：2

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