Initial stage of the Bi surfactant-mediated growth of Ge on Si(111): a structural study

被引：10
|
作者：
Schmidt, T [1 ]
Falta, J [1 ]
Materlik, G [1 ]
机构：
[1] DESY, Deutsch Elektronen Synchrotron, Hamburger Synchrontronstschlungslab HASYLAB, D-22607 Hamburg, Germany
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
关键词：
Bi; surfactant; Si(111);
D O I：
10.1016/S0169-4332(00)00456-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have used Bi as a surfactant in Ge growth on Si(111) and present a detailed analysis of the adsorption site geometry of Bi on bare Si(111) as well as on ultrathin Ge films (1-2 monolayers, ML) grown on Bi-terminated Si(111). X-ray standing waves (XSWs) have been employed to show that at a growth temperature of 485 degrees C, Bi occupies T-1 adsorption sites on Si(111). After Ce deposition, a site exchange of Ge and Bi is observed, and Bi is found to reside on T-1 sites on top of the pseudomorphically strained Ge. The Si-Bi and the Ge-Bi bond lengths have been determined to be very close to the sum of the respective covalent radii. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：399 / 405
页数：7
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