The influence of cavities and point defects on boron diffusion in silicon

被引：18
作者：
Wong-Leung, J [1 ]
Williams, JS [1 ]
Petravic, M [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 19期
关键词：
D O I：
10.1063/1.121372
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried out into wafers containing pre-formed cavities and TED of boron was suppressed during subsequent annealing, In some cases, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient enhanced diffusion occurring, (C) 1998 American Institute of Physics. [S0003-6951(98)03419-6].
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页码：2418 / 2420
页数：3
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