A 2-6 GHz Single-chip Transceiver Front-End GaN MMIC for Electronic Warfare Application

被引：4

作者：

Tang, Bowen ^{[1
]}

Lin, Zhikang ^{[1
]}

Xu, Yuehang ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2021年

关键词：

GaN; broadband; multi-function chip; switch; amplifier;

D O I：

10.1109/IMWS-AMP53428.2021.9643988

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This article presents a single-chip transceiver frontend GaN MMIC operating at 2-6 GHz with high power handling capacity. The GaN MMIC integrates a power amplifier, a switch and a low-noise amplifier. A simple on-chip tuned inductance solution is proposed considering the resonance caused by the on-chip capacitance and the inductance induced by the bias bond-wire of the power amplifier to enhance wide-band design. To enhance the power capacity and isolation of transceiver, a topology of "one series and two in parallel" is proposed for switch, which shows more than 100W power handling capacity and 40 dB isolation. The transceiver MMIC demonstrated a 39 dBm of output power and a gain greater than 15 dB of the transmitting branch, the power added efficiency is 24-37% in the range of 2-6 GHz, the noise figure of the receiving branch is better than 3dB and the gain is greater than 15 dB over 1.5-5.5 GHz.

引用

页码：176 / 178

页数：3

共 7 条

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