Single photon emission from positioned GaAs/AlGaAs photonic nanowires

被引：75
作者：
Heinrich, J. [1 ]
Huggenberger, A.
Heindel, T.
Reitzenstein, S.
Hoefling, S.
Worschech, L.
Forchel, A.
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期
关键词：
aluminium compounds; gallium arsenide; III-V semiconductors; nanofabrication; nanowires; photon antibunching; photonic crystals; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; spectral line breadth; QUANTUM DOTS; GAAS NANOWIRES; GROWTH; PHOTOLUMINESCENCE; TRANSITION;
D O I：
10.1063/1.3440967
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]
引用
收藏
页数：3
相关论文
共 20 条
[1]   Electrically driven high-Q quantum dot-micropillar cavities [J].
Boeckler, C. ;
Reitzenstein, S. ;
Kistner, C. ;
Debusmann, R. ;
Loeffler, A. ;
Kida, T. ;
Hoefling, S. ;
Forchel, A. ;
Grenouillet, L. ;
Claudon, J. ;
Gerard, J. M. .
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[2]  
Borgström MT, 2005, NANO LETT, V5, P1439, DOI 10.1021/nl050802y
[3]   A highly efficient single-photon source based on a quantum dot in a photonic nanowire [J].
Claudon, Julien ;
Bleuse, Joel ;
Malik, Nitin Singh ;
Bazin, Maela ;
Jaffrennou, Perine ;
Gregersen, Niels ;
Sauvan, Christophe ;
Lalanne, Philippe ;
Gerard, Jean-Michel .
NATURE PHOTONICS, 2010, 4 (03) :174-177
[4]   Solid-state single photon sources: the nanowire antenna [J].
Friedler, I. ;
Sauvan, C. ;
Hugonin, J. P. ;
Lalanne, P. ;
Claudon, J. ;
Gerard, J. M. .
OPTICS EXPRESS, 2009, 17 (04) :2095-2110
[5]   Controlling the emission profile of a nanowire with a conical taper [J].
Gregersen, Niels ;
Nielsen, Torben R. ;
Claudon, Julien ;
Gerard, Jean-Michel ;
Mork, Jesper .
OPTICS LETTERS, 2008, 33 (15) :1693-1695
[6]   Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy [J].
Ikejiri, Keitaro ;
Sato, Takuya ;
Yoshida, Hiroatsu ;
Hiruma, Kenji ;
Motohisa, Junichi ;
Hara, Shinjiroh ;
Fukui, Takashi .
NANOTECHNOLOGY, 2008, 19 (26)
[7]  
Michler P, 2002, PHYS STATUS SOLIDI B, V229, P399, DOI 10.1002/1521-3951(200201)229:1<399::AID-PSSB399>3.0.CO
[8]  
2-P
[9]   A single-mode solid-state source of single photons based on isolated quantum dots in a micropillar [J].
Moreau, E ;
Robert, I ;
Manin, L ;
Thierry-Mieg, V ;
Gérard, JM ;
Abram, I .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :418-422
[10]   Quantum dots and tunnel barriers in InAsOInP nanowire heterostructures: Electronic and optical properties [J].
Niquet, Yann-Michel ;
Mojica, Dulce Camacho .
PHYSICAL REVIEW B, 2008, 77 (11)
12