Single photon emission from positioned GaAs/AlGaAs photonic nanowires

被引:74
|
作者
Heinrich, J. [1 ]
Huggenberger, A.
Heindel, T.
Reitzenstein, S.
Hoefling, S.
Worschech, L.
Forchel, A.
机构
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
关键词
aluminium compounds; gallium arsenide; III-V semiconductors; nanofabrication; nanowires; photon antibunching; photonic crystals; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; spectral line breadth; QUANTUM DOTS; GAAS NANOWIRES; GROWTH; PHOTOLUMINESCENCE; TRANSITION;
D O I
10.1063/1.3440967
中图分类号
O59 [应用物理学];
学科分类号
摘要
Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]
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页数:3
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