共 50 条
- [33] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy GALLIUM NITRIDE MATERIALS AND DEVICES XV, 2020, 11280
- [35] VACANCY-TYPE DEFECTS IN ION-IMPLANTED DIAMONDS PROBED BY MONOENERGETIC POSITRON BEAMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 1772 - 1777
- [37] Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam 2016 16th International Workshop on Junction Technology (IWJT), 2016, : 35 - 38
- [38] Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 15, 2018, 86 (10): : 149 - 160