Measurement of the thermomechanical strain of electronic devices by shearography

被引:7
作者
Dilhaire, S [1 ]
Jorez, S
Cornet, A
Lopez, LDP
Claeys, W
机构
[1] Univ Bordeaux 1, Lab Caracterisat Composants Elect, CPMOH, F-33405 Talence, France
[2] Univ Catholique Louvain, Lab FYAM, B-1348 Louvain, Belgium
关键词
D O I
10.1016/S0026-2714(00)00124-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with the optical measurement of strain in electronic power devices under normal operating conditions. This non-contact and non-invasive method called shearography is based upon speckle interferometry. The technique developed produces images of normal displacement gradient of devices. Numerical processing allows the determination of the surface displacement and its related strain. The main advantages of the measuring tool are to be a simple optical set-up, to be very robust with a good sensitivity and to measure directly strain. Therefore, his well suited to fit into an industrial environment. (C) 2000 Elsevier Science Ltd. Ail rights reserved.
引用
收藏
页码:1509 / 1514
页数:6
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