Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p(+)-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p(+)-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of' >102 and long retention times of >105 s. The conduction mechanism of the Ag/ZnMn2O4/p(+)-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm's law, trap-filled-limited and Child's law conduction procedure at room temperature.