Capture of flaked particles during plasma etching by a negatively biased electrode

被引:21
作者
Moriya, T [1 ]
Ito, N [1 ]
Uesugi, F [1 ]
机构
[1] NEC Elect Corp, Anal Technol Dev Div, Kawasaki, Kanagawa 2118668, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 05期
关键词
D O I
10.1116/1.1788678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A bias electrode was installed inside an etching chamber to investigate the effect of bias voltage on particle behavior. To detect flaked particles individually and to determine their trajectories, an in situ particle monitoring system which employs laser light scattering was employed. Consequently, it was found that particles were attracted when negative voltage was supplied to the bias electrode. However, particles were pushed toward the wafer when positive voltage was applied. It was thus clarified that the flaked particles have positive charges, and concluded that negative bias voltage can control their behavior and keep the wafer surface particle free, without serious affect on the etching process. (C) 2004 American Vacuum Society.
引用
收藏
页码:2359 / 2363
页数:5
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