Highly doped n-type silicon theoretical optimization

Considering the recent modification of n-type highly doped silicon parameters [1], these work has been made based on one-dimensional models with analytical solutions [2,3]. In order to get a good accuracy, a fifth order approximation has been considered. Passivated emitters with gaussian profile of n(+)pp(+) solar cells were optimized. According to our results. emitter solar cells show their best efficiencies (eta similar or equal to 21.60 - 21.70 %) with N-s = 1 x 10(19) - 5 x 10(18) (cm(-3)) and (1.2 - 2.0)mu M emitter thickness range.