Highly doped n-type silicon theoretical optimization

被引：0

作者：

Stem, N ^{[1
]}

Cid, M ^{[1
]}

机构：

[1] Univ Sao Paulo, Escola Politecn, Dept Engn Electron, Lab Microelectron, BR-05424970 Sao Paulo, Brazil

来源：

1997 SBMO/IEEE MTTS-S - INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 AND 2 | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Considering the recent modification of n-type highly doped silicon parameters [1], these work has been made based on one-dimensional models with analytical solutions [2,3]. In order to get a good accuracy, a fifth order approximation has been considered. Passivated emitters with gaussian profile of n(+)pp(+) solar cells were optimized. According to our results. emitter solar cells show their best efficiencies (eta similar or equal to 21.60 - 21.70 %) with N-s = 1 x 10(19) - 5 x 10(18) (cm(-3)) and (1.2 - 2.0)mu M emitter thickness range.

引用

页码：637 / 642

页数：6