Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction

被引：14

作者：

Franco, N

Chrost, J

Avila, J

Asensio, MC

Muller, C

Dudzik, E

Patchett, AJ

McGovern, IT

Giebel, T

Lindsay, R

Fritzsche, V

Bradshaw, AM

Woodruff, DP

机构：

[1] Ctr Univ Paris Sud, LURE, F-91405 Orsay, France

[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

[3] Univ Dublin Trinity Coll, Dublin 2, Ireland

[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[5] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

基金：

英国工程与自然科学研究理事会;

关键词：

adsorption; semiconductor surfaces; structure; photoelectron diffraction;

D O I：

10.1016/S0169-4332(97)00506-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanned-energy-mode photoelectron diffraction we have determined the local adsorption geometry of the OH fragments adsorbed on Si(100)(2 X 1) surface. On this substrate water is known to adsorb dissociatively even at low temperature (90 K), which gives rise to a surface layer comprising coadsorbed OH and H species. The OH fragments are found to be adsorbed in off-atop sites at a dimerised surface Si atom with O-Si bond-lengths of 1.7 +/- 0.1 Angstrom and bond-angles relative to the surface normal of 22 +/- 5 degrees. (C) 1998 Elsevier Science B.V.

引用

页码：219 / 222

页数：4

共 16 条

[1] EVIDENCE OF DISSOCIATION OF WATER ON THE SI(100)2X1 SURFACE [J].