Maskless atmospheric pressure PECVD of SiOx films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device

被引:11
作者
Wang, Tao [1 ]
Liu, Jingquan [2 ,3 ]
Shi, Liping [1 ,4 ]
Zhang, Xingquan [1 ]
Lv, Li [1 ]
Zhang, Guotao [1 ]
Wang, Jun [1 ]
机构
[1] Anhui Univ Technol, Sch Mech Engn, Maanshan 243032, Peoples R China
[2] Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai, Peoples R China
[3] Shanghai Jiao Tong Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai, Peoples R China
[4] Int Sci & Technol Cooperat Base Intelligent Equip, Maanshan, Peoples R China
基金
中国国家自然科学基金;
关键词
atmospheric pressure PECVD; microplasma; micropatterning; silicon dioxide; CHEMICAL-VAPOR-DEPOSITION; PLASMA-JET;
D O I
10.1002/ppap.201900142
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents the use of a simple-arranged, low-cost, and flexible atmospheric pressure microplasma generation device (mu PGD) with controlled gas discharge to achieve maskless atmospheric plasma-enhanced chemical vapor deposition (PECVD) of SiOx films on both planar and nonplanar surfaces. The mu PGD is mainly composed of a copper-polyimide-copper sandwich structure with predefined microfluidic channels. Uniform microplasmas of different shapes and dimensions were generated in the open air. SiOx films were masklessly deposited with well-defined edges and good feature transfer fidelity. The SEM, EDS, XPS, and FTIR spectra of the deposited film confirm the SiOx structure. These results indicate that mu PGD is able to achieve maskless PECVD of SiOx films in the open air, especially micropatterning on nonplanar surfaces.
引用
收藏
页数:11
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