Effect of sinter temperature on the electrical properties of TiO2-based capacitor-varistors

被引：59

作者：

Li, CP ^{[1
]}

Wang, JF ^{[1
]}

Su, WB ^{[1
]}

Chen, HC ^{[1
]}

Wang, YJ ^{[1
]}

Zhuang, DX ^{[1
]}

机构：

[1] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China

来源：

MATERIALS LETTERS | 2003年 / 57卷 / 08期

关键词：

varistors; sintering temperature; titania oxide; yttrium; oxide; barriers; electrical properties;

D O I：

10.1016/S0167-577X(02)00996-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of sinter temperature on the electrical properties of a new TiO2-based varistor system, TiO2.Y2O3.Nb2O5, was investigated by measuring the properties of I-V permittivity and grain-boundary barriers. The varistor of 99.30%TiO2.0.60%Y2O3.0.10%Nb2O5 composite sintered at 1400 degreesC has a maximal nonlinear coefficient of a alpha = 7.8, a low reference electrical field of 12.8 V-mm-at I mA cm(-2), a high density of 4.20 g/cm(3) and the ultrahigh permittivity of more than 85 000 (measured at I kHz), which is consistent with its highest and narrowest grain-boundary barriers. Due to these properties the (Nb, Y)-doped TiO2 varistors sintered at 1400 degreesC has varistor-capacitance multifunctional components, which are quite useful in the situation that the voltage protection and high-frequency noise absorption are meanwhile required. In order to illustrate the grain-boundary barrier formation in TiO2.Y2O3.Nb2O5 varistors, a grain-boundary defect barrier model was also introduced. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1400 / 1405

页数：6

共 15 条

[1]

[Anonymous], ADDITIVES INTERFACES

[2]

Clarke DR, 1999, J AM CERAM SOC, V82, P485

[3] PHYSICS OF ZINC-OXIDE VARISTORS [J].