High Al-content AlGaN/GaN MODFET's for ultrahigh performance

被引：251

作者：

Wu, YF ^{[1
]}

Keller, BP

Fini, P

Keller, S

Jenkins, TJ

Kehias, LT

Denbaars, SP

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Wright State Univ, Res Ctr, Dayton, OH 45435 USA

[3] USAF, Wright Lab, Electron Device Div, Wright Patterson AFB, OH 45433 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 02期

关键词：

D O I：

10.1109/55.658600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of an AIGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the AIGaN/GaN MODFET structure, It is shown that the room temperature mobility has little degradation with increasing Al mole-fraction up to 50%. 0.7-mu m gatelength Al0.5Ga0.5N/GaN MODFET's by optical lithography exhibit a current density of 1 A/mm and three-terminal breakdown voltages up to 200 V, These devices on sapphire substrates without thermal management also show CW power densities of 2.84 and 2.57 W/mm at 8 and 10 GHz, respectively, representing a marked performance improvement for GaN-based FET's.

引用

页码：50 / 53

页数：4

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