Quasi-one-dimensional transport of nondegenerate electrons in two-dimensional systems with a fluctuation potential

被引:4
|
作者
Aronzon, BA [1 ]
Meilikhov, EZ
Bakaushin, DA
Vedeneev, AS
Ryl'kov, VV
机构
[1] Russian Natl Sci Ctr, IV Kurchatov Atom Energy Inst, Inst Mol Phys, Moscow 123182, Russia
[2] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino 141120, Moscow Region, Russia
[3] Russian Natl Sci Ctr, IV Kurchatov Atom Energy Inst, Inst Mol Phys, Moscow 123182, Russia
[4] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino 141120, Moscow Region, Russia
关键词
D O I
10.1134/1.567577
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A threshold vanishing of the Hall emf with decreasing gate voltage is observed at approximate to 77 K in semiconductor systems which are disordered as a result of a high built-in charge density near the plane of the 2D-electron channel. The effect is observed at a channel conductivity a approximate to e(2)/h and is due to a transition to nondegenerate-electron transport via a 2D percolation cluster having a quasi-1D character of the conduction. We have established that the conductance of "short" structures, having a length of the order of the correlation length of a percolation cluster, equals approximate to e(2)/h per electron and is determined by isolated percolation paths having a lowered percolation threshold. These phenomena are a general property of disordered 2D systems. (C) 1997 American Institute of Physics.
引用
收藏
页码:668 / 674
页数:7
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