Spin-flip effects on Andreev reflection process

被引:16
作者
Chen, ZG
Wang, J
Wang, BG [1 ]
Xing, DY
机构
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Fujian Normal Univ, Sch Phys & Optoelect Technol, Fuzhou 350007, Peoples R China
基金
中国国家自然科学基金;
关键词
Andreev reflection; spin-flip; quantum dot;
D O I
10.1016/j.physleta.2004.11.049
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the nonequilibrium transport properties of a quantum dot in the normal-metal and superconductor hybrid system, where the Andreev reflection plays the important role. The electron spin-flip effect in quantum dot is explicitly taken into account. By using the nonequilibrium Green's function (NEGF) approach, we first give a general current formula which is valid for any bias and temperature, then we discuss the linear conductance in terms of the local density of states. The various resonant peaks appear for the different spin-flip strengths in quantum dot. Finally, we numerically calculate the current-bias characteristic when the bias is smaller than the superconductor gap. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:436 / 446
页数:11
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