Promising high-k dielectric permittivity of pyrochlore-type crystals of Nd2Hf2O7

被引：24

作者：

Chun, J. ^{[1
]}

Reuvekamp, P. G. ^{[1
]}

Chen, D. ^{[1
]}

Lin, C. ^{[1
]}

Kremer, R. K. ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 03期

关键词：

GATE DIELECTRICS; THERMAL-STABILITY; TRANSISTORS; OXIDES; HFO2; ZRO2; SI;

D O I：

10.1039/c4tc02416h

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A single crystal of Nd2Hf2O7 was grown by the floating-zone technique. We have characterized its structural, dielectric, optical and thermal properties. At room temperature, the static dielectric constant amounts to similar to 46. Ultraviolet absorption measurements indicate a direct band gap of similar to 5 eV.

引用

页码：491 / 494

页数：4

共 26 条

[1] High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air [J].

Adamopoulos, George ;

Thomas, Stuart ;

Woebkenberg, Paul H. ;

Bradley, Donal D. C. ;

McLachlan, Martyn A. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2011, 23 (16) :1894-+

[2] Solution-based fabrication of high-k gate dielectrics for next-generation metal-oxide semiconductor transistors [J].

Aoki, Y ;

Kunitake, T .

ADVANCED MATERIALS, 2004, 16 (02) :118-+

[3] Investigating the Local Structure of Lanthanoid Hafnates Ln2Hf2O7 via Diffraction and Spectroscopy [J].

Blanchard, Peter E. R. ;

Liu, Sam ;

Kennedy, Brendan J. ;

Ling, Chris D. ;

Avdeev, Max ;

Aitken, Jade B. ;

Cowie, Bruce C. C. ;

Tadich, Anton .

JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (05) :2266-2273

[4] Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition [J].

Cho, MH ;

Roh, YS ;

Whang, CN ;

Jeong, K ;

Nahm, SW ;

Ko, DH ;

Lee, JH ;

Lee, NI ;

Fujihara, K .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :472-474

[5] Dispersion and absorption in dielectrics I. Alternating current characteristics [J].

Cole, KS ;

Cole, RH .

JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (04) :341-351

[6]

CROSS LE, 1987, FERROELECTRICS, V76, P241, DOI 10.2109/jcersj.99.829

[7] The pyrochlore to defect fluorite phase transition in Y2Sn2-xZrxO7 [J].

de los Reyes, Massey ;

Whittle, Karl R. ;

Zhang, Zhaoming ;

Ashbrook, Sharon E. ;

Mitchell, Martin R. ;

Jang, Ling-Yun ;

Lumpkin, Gregory R. .

RSC ADVANCES, 2013, 3 (15) :5090-5099

[8]

Gray P. R., 2009, Analysis and design of analog integrated circuits, P156

[9] Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 [J].

Gutowski, M ;

Jaffe, JE ;

Liu, CL ;

Stoker, M ;

Hegde, RI ;

Rai, RS ;

Tobin, PJ .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1897-1899

[10] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing [J].

Lee, BH ;

Kang, LG ;

Nieh, R ;

Qi, WJ ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1926-1928

← 1 2 3 →