Cu(In1-xGax)Se2 growth studies by in situ spectroscopic light scattering

被引：40
作者：
Scheer, R
Neisser, A
Sakurai, K
Fons, P
Niki, S
机构：
[1] Hahn Meitner Inst Berlin GmbH, Div Solar Energy, D-14109 Berlin, Germany
[2] Natl Inst Adv Ind Sci & Technol, Thin Film Solar Cells Grp, Energy Elect Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 13期
关键词：
D O I：
10.1063/1.1563309
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of polycrystalline Cu(In1-xGax)Se-2 thin films using a three-stage deposition process has been investigated by in situ diffuse spectroscopic light scattering in the wavelength range of 400-800 nm. Differences in the time dynamics of the intensity at different wavelengths can be explained by the development of surface roughness at different length scales. Of specific interest is the development of roughness around the stoichiometric points of film formation. It is shown that on-line monitoring of the spectroscopic light scattering can be used for process control and for adjustment of the final film roughness. (C) 2003 American Institute of Physics.
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页码：2091 / 2093
页数：3
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