Formation of nearly defect-free nanoripples by sputtering of GaAs (001) surface at high temperature

被引：6
|
作者：
Chowdhury, Debasree [1 ,2 ]
Ghose, Debabrata [1 ]
机构：
[1] Saha Inst Nucl Phys, Sect 1,Block AF, Kolkata 700064, India
[2] Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy
来源：
SURFACES AND INTERFACES | 2019年 / 17卷
关键词：
GaAs (001) surface; Ar+ sputtering; ES barrier; Ripple; EPITAXIAL-GROWTH; MONTE-CARLO; DIFFUSION; HOMOEPITAXY;
D O I：
10.1016/j.surfin.2019.100364
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The evolution of GaAs (001) surface morphology by normal incidence 1 keV Ar+ ion sputtering at high temperature has been investigated for different temperature and ion fluence. An anisotropic surface modulation is observed above the substrate recrystallization temperature similar to 300 degrees C. With increase of sputtering time, they evolve into highly ordered and almost defect-free ripple-like structure consisting of alternate arrays of elongated terraces and nano-grooves with ridges along the < 1<(1)over bar>0 > direction. Such surface instability is attributed to the effect of anisotropic surface diffusion of vacancies in the presence of Ehrlich-Schwoebel barrier. The amplitude and wavelength of the ripple show a power law increase with sputtering time and finally saturate at longer time irradiation.
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页数：5
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