Power device packaging technologies for extreme environments

被引：87
作者：
Johnson, R. Wayne [1 ]
Wang, Cai
Liu, Yi
Scofield, James D.
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Lab Elect Assembly & Packaging, Auburn, AL 36849 USA
[2] AFRL, PRPE, Wright Patterson AFB, OH 45433 USA
来源：
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING | 2007年 / 30卷 / 03期
关键词：
die attach; high-temperature aging; passivation; wire bonding;
D O I：
10.1109/TEPM.2007.899158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbide is a wide-bandgap semiconductor capable of operation at temperatures in excess of 300 degrees C. However, high-temperature packaging to interface with the other elements of the electrical system is required. Die attach, wire bonding, and passivation materials and techniques have been demonstrated for use at 300 degrees C. Transient liquid phase bonding has been developed with Au:Sn/Au, yielding high die shear strength after 2000 h at 400 degrees C. Large diameter (250 mu m) gold and platinum wire bonding was evaluated for top side electrical contact. An wire was reliable after 2000 h at 300 degrees C with Ti/Ti:W/Au pads over passivation on the SiC. However, An wire on Ti/Pt/Au and Pt wire on both Ti/TI:W/Au and Ti/Pt/Au exhibited passivation fracture with aging. Polyimide has been demonstrated for 2000 h at 300 degrees C in air as a high-voitage passivation layer.
引用
收藏
页码：182 / 193
页数：12
相关论文
共 19 条
  • [1] ADEDEJI AV, 2005, P INT C SIL CARB REL
  • [2] AGARWAL A, 2006, P 2006 INT HIGH TEMP, P398
  • [3] [Anonymous], YOUNGS MODULUS ELAST
  • [4] BONDARENKO V, 2006, P 2006 INT HIGH TEMP, P488
  • [5] BUCH A, 1999, ASM INT
  • [6] Chang HR, 2003, IEEE IND ELEC, P1116
  • [7] High-temperature operation of SiC planar ACCUFET
    Chilukuri, RK
    Shenoy, PM
    Baliga, BJ
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1999, 35 (06) : 1458 - 1462
  • [8] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE
    DAVIS, RF
    KELNER, G
    SHUR, M
    PALMOUR, JW
    EDMOND, JA
    [J]. PROCEEDINGS OF THE IEEE, 1991, 79 (05) : 677 - 701
  • [9] FRIEDRICHS P, 2006, P 2006 INT HIGH TEMP, P420
  • [10] GARUDA VR, 1997, P 32 INT EN CONV ENG, V1, P317
12