Power device packaging technologies for extreme environments

被引：88

作者：

Johnson, R. Wayne ^{[1
]}

Wang, Cai

Liu, Yi

Scofield, James D.

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Lab Elect Assembly & Packaging, Auburn, AL 36849 USA

[2] AFRL, PRPE, Wright Patterson AFB, OH 45433 USA

来源：

IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING | 2007年 / 30卷 / 03期

关键词：

die attach; high-temperature aging; passivation; wire bonding;

D O I：

10.1109/TEPM.2007.899158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide is a wide-bandgap semiconductor capable of operation at temperatures in excess of 300 degrees C. However, high-temperature packaging to interface with the other elements of the electrical system is required. Die attach, wire bonding, and passivation materials and techniques have been demonstrated for use at 300 degrees C. Transient liquid phase bonding has been developed with Au:Sn/Au, yielding high die shear strength after 2000 h at 400 degrees C. Large diameter (250 mu m) gold and platinum wire bonding was evaluated for top side electrical contact. An wire was reliable after 2000 h at 300 degrees C with Ti/Ti:W/Au pads over passivation on the SiC. However, An wire on Ti/Pt/Au and Pt wire on both Ti/TI:W/Au and Ti/Pt/Au exhibited passivation fracture with aging. Polyimide has been demonstrated for 2000 h at 300 degrees C in air as a high-voitage passivation layer.

引用

页码：182 / 193

页数：12

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