Solid-solution thin films of ternary BaTiO3-Bi(Mg1/2Ti1/2)O3-BiFeO3 system epitaxially grown on SrRuO3//SrTiO3 substrates via chemical solution process

被引:1
作者
Uchida, Hiroshi [1 ]
Kaneko, Noriyuki [2 ]
Yasui, Shintaro [3 ]
Funakubo, Hiroshi [2 ,4 ]
机构
[1] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo 1028554, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo Inst Technol, Lab Mat & Struct, Yokohama, Kanagawa 2268502, Japan
[4] Tokyo Inst Technol, Sch Mat & Chem Technol, Yokohama, Kanagawa 2268502, Japan
基金
日本学术振兴会;
关键词
PIEZOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; FERROELECTRIC PROPERTIES; CRYSTAL ORIENTATION; COMPOSITION DEPENDENCE; DEPOSITION; CERAMICS; PHASE; BI;
D O I
10.7567/JJAP.57.0902B5
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead (Pb)-free perovskite thin films of the ternary BaTiO3-Ba(Mg1/2Ti1/2)O-3-BiFeO3(BT-BMT-BF) solid solution system with preferential crystal orientation were fabricated and the dependence of their polarization behavior on crystal anisotropy was evaluated. The chemical solution deposition (CSD) technique was utilized for the film deposition while controlling the chemical composition. The films fabricated on single-crystal perovskite substrates of (100)SrRuO3//(100)SrTiO3 and (111)SrRuO3//(111)SrTiO3 exhibited preferential (100)(pc) and (111)(pc) orientations, respectively, depending on the crystallographic feature on the substrate surface. Excess Bi addition into the precursor solution to compensate for the volatile Bi component enhanced the polarization behavior of the resulting films heat-treated at 750 degrees C to induce crystallization. The (111)(pc)-oriented BT-BMT-BF film had a larger remanent polarization (P-r) of approximately 35 mu C/cm(2) than the (100)(pc)-oriented film (P-r = approximately 20 mu C/cm(2)). (C) 2018 The Japan Society of Applied Physics
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页数:5
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