Microstructures, electrical and optical characteristics of ZnO thin films by oxygen plasma-assisted pulsed laser deposition

被引：31
作者：
Gu, Yanfei
Li, Xiaomin [1 ]
Yu, Weidong
Gao, Xiangdong
Zhao, Junliang
Yang, Chang
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Ceram & Superfine Microstruct, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 01期
基金：
中国国家自然科学基金;
关键词：
crystal structure; electrical properties; photoluminescence; Raman scattering; pulsed laser deposition; zinc oxide;
D O I：
10.1016/j.jcrysgro.2007.03.050
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In order to decrease the free-electron concentration and increase the crystalline quality, zinc oxide (ZnO) thin films were deposited on sapphire (0 0 0 1) substrates by oxygen plasma-assisted pulsed laser deposition (PLD). ZnO films showed higher oxygen composition, stronger diffraction intensity of the (0002) direction, and larger grain size with regular hexagonal grain shape. The free-electron concentration was decreased greatly from similar to 10(19) to similar to 10(14) cm(-3) and the Hall mobility was increased from 6.8 to 37 cm(2) V-1 S-1. Furthermore, the intensity of the resonant Raman scattering and ultraviolet photoluminescence emission was increased. This enhancement of the crystalline, electrical and optical quality would be attributed to the increase of high activity oxygen density introduced by the plasma oxygen source. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：36 / 39
页数：4
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