Controlled incorporation of mid-to-high Z transition metals in CVD diamond

被引：17

作者：

Biener, M. M. ^{[1
]}

Biener, J. ^{[1
]}

Kucheyev, S. O. ^{[1
]}

Wang, Y. M. ^{[1
]}

El-Dasher, B. ^{[1
]}

Teslich, N. E. ^{[1
]}

Hamza, A. V. ^{[1
]}

Obloh, H. ^{[2
]}

Mueller-Sebert, W. ^{[2
]}

Wolfer, M. ^{[2
]}

Fuchs, T. ^{[2
]}

Grimm, M. ^{[2
]}

Kriele, A. ^{[2
]}

Wild, C. ^{[2
]}

机构：

[1] Lawrence Livermore Natl Lab, Nanoscale Synth & Characterizat Lab, Livermore, CA 94550 USA

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

关键词：

Diamond; Chemical vapor deposition; Plasma CVD; Defect characterization; Doping; Inertial confinement fusion; RAMAN-SPECTRA; FILMS; BORON; POLYCRYSTALLINE; NITROGEN; CONTAMINATION; IMPURITIES; DEPOSITION; TUNGSTEN;

D O I：

10.1016/j.diamond.2010.02.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a general method to fabricate transition metal related defects in diamond. Controlled incorporation of Mo and W in synthetic CVD diamond was achieved by adding volatile metal precursors to the diamond chemical vapor deposition (CVD) growth process. Effects of deposition temperature, grain structure and precursor exposure on the incorporation efficiency were systematically studied, and doping levels of up to 0.25 at.% have been achieved. The metal atoms are uniformly distributed throughout the diamond grains without any indication of inclusion formation. These results are discussed in context of the kinetically controlled growth process of CVD diamond. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：643 / 647

页数：5

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