Focused gold ions beam for localized epitaxy of semiconductor nanowires

被引：13

作者：

Gierak, J. ^{[1
]}

Madouri, A. ^{[1
]}

Bourhis, E. ^{[1
]}

Travers, L. ^{[1
]}

Lucot, D. ^{[1
]}

Harmand, J. C. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 5-8期

关键词：

Focused ion beam; Gold ions; Deposition; Nanowires; LIQUID GOLD; GROWTH; EMISSION; GAAS;

D O I：

10.1016/j.mee.2009.11.164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the optimization of a focused gold ion beam source which is used for local and shallow implantation of gold in GaAs wafers. The ion source uses pure liquid gold and the ion optics is designed for high resolution patterning. Imaging and etching performances are evaluated. Then, arrays of implanted gold dots are fabricated at 20 key in GaAs substrates, which are subsequently used for epitaxial growth. Formation of organized GaAs nanowires is observed. Their diameter can be lower than 10 nm. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1386 / 1390

页数：5

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