Modeling of dual material surrounding split gate junctionless transistor as biosensor

In this paper an analytical model of dual material surrounding split gate junctionless transistor for application as a biosensor is introduced. The simulation results show fair compatibility with the analytical models developed for the channel center potential and threshold voltage at channel length of 45 nm and 20 nm. For the detection of the bio-molecules, concept of dielectric modulation has been used. The model shows a satisfactory value of sensitivity in the range of 0-0.27 and 0-0.8 for relative permittivity of biomolecules varying from 1 to 9 at channel length of 45 run and 20 run respectively, thus making it an attractive option for use as biosensor. This model has been demonstrated with the aid of TCAD device simulations.