Defects of SiC nanowires studied by STM and STS

被引：4

作者：

Busiakiewicz, A. ^{[1
]}

Huczko, A. ^{[2
]}

Dudziak, T. ^{[3
]}

Puchalski, M. ^{[1
]}

Kozlowski, W. ^{[1
]}

Cichomski, M. ^{[4
]}

Cudzilo, S. ^{[5
]}

Klusek, Z. ^{[1
]}

Olejniczak, W. ^{[1
]}

机构：

[1] Univ Lodz, Dept Solid State Phys, Div Phys & Technol Nanometer Struct, PL-90236 Lodz, Poland

[2] Warsaw Univ, Dept Chem, PL-02093 Warsaw, Poland

[3] Cranfield Univ, Power Generat Technol Ctr, Cranfield MK43 0AL, Beds, England

[4] Univ Lodz, Dept Chem Technol & Environm Protect, PL-90236 Lodz, Poland

[5] Mil Univ Technol, PL-00908 Warsaw, Poland

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 15期

关键词：

Silicon carbide; Nanowire; Defect; STM; STS; SCANNING TUNNELING SPECTROSCOPY; SILICON-CARBIDE; NATIVE DEFECTS; SURFACE;

D O I：

10.1016/j.apsusc.2010.01.102

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e. g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：4771 / 4776

页数：6

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