Electrical, optical and structural properties of copper aluminium diselenide thin films

被引：2

作者：

Joseph, CM ^{[1
]}

Menon, CS ^{[1
]}

机构：

[1] Mahatma Gandhi Univ, Sch Pure & Appl Phys, Kottayam 686560, Kerala, India

来源：

SOLID STATE PHENOMENA | 1997年 / 55卷

关键词：

CuAlSe2; thin films; activation energy; band gap;

D O I：

10.4028/www.scientific.net/SSP.55.226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuAlSe2 (GAS) thin films are deposited using vacuum flash evaporation. The as-deposited films (thickness - 2000 Angstrom) are annealed in vacuum (10(-6) torr) at temperatures in the range 50 - 200 degrees C for one hour. The electrical conductivity is measured in the range 30-200 degrees C. From the Arrhenius plot of conductivity. the thermal activation energy E-A is calculated for the films in the impurity scattering region. From the optical transmission spectra, optical band Sap Eg values are calculated. XRD patterns indicated polycrystallanity for vacuum annealed films and grain size of the films are determined and the results are discussed.

引用

页码：226 / 229

页数：4

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