Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

被引：233

作者：

Xu, Zhi ^{[1
,2
]}

Bando, Yoshio ^{[2
]}

Wang, Wenlong ^{[1
]}

Bai, Xuedong ^{[1
]}

Golberg, Dmitri ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS NANO | 2010年 / 4卷 / 05期

关键词：

silver sulfide; ionic conductors; high-resolution transmission electron microscopy; resistance nanoswitch; nonvolatile memory; ELECTRIC-FIELD; ATOMIC SWITCH; SILVER; MICROSCOPE; TRANSITION; TRANSPORT; SULFIDE; OXIDES;

D O I：

10.1021/nn100483a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existences and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag2S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag2S argentite phase and a Ag nanocrystal together formed the ionic and electronic conductive channel. The preferential atomic sites for Ag nanocrystal growth within the argentite phase were finally clarified.

引用

页码：2515 / 2522

页数：8

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