Enhancement and depletion-mode pHEMT using 6 inch GaAs cost-effective production process

被引：5

作者：

Hsieh, YY ^{[1
]}

Hwang, T ^{[1
]}

Yeh, TJ ^{[1
]}

Yuan, CC ^{[1
]}

Chen, CJ ^{[1
]}

Yeh, P ^{[1
]}

Hwang, JH ^{[1
]}

Chen, CH ^{[1
]}

Wu, CS ^{[1
]}

机构：

[1] WIN Semicond Corp, Tao Yuan Shien, Taiwan

来源：

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年

关键词：

D O I：

10.1109/CSICS.2004.1392506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A cost effective Enhancement/Depletion mode pHEMT MMIC process on 6-inch GaAs wafer is demonstrated by using 0.5um gate-length optical stepper pHEMT technology. E-mode and D-mode gates are deposited simultaneously in this process simplification. The E-mode pHEMT exhibits a pinch-off voltage of +0.22V (defined at 0.1mA/mm), and a maximum extrinsic transconductance of 400mS/mm at room temperature. The off-state current of E-mode device is typically 0.15uA/mm at Vgs=0V and Vds=3V. This current is extreme low and is suitable for high density digital circuits with minimized power consumption. On the other hand, a pinch-off voltage of -0.75V and a transconductance of 370mS/mm has been measured for D-mode pHEMT. Due to excellent DC/ RF characteristics and good uniformity of E/D pHEMTs from optimized optical gate lithography and front-side process, the D-mode Switch and E-mode digital control circuit constitute a monolithic solution to RF control circuits in WLAN and cell phone applications.

引用

页码：111 / 114

页数：4