Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

被引：97

作者：

Robinson, Joshua A. ^{[1
,2
]}

LaBella, Michael, III ^{[1
]}

Trumbull, Kathleen A. ^{[1
]}

Weng, Xiaojun ^{[3
]}

Cavelero, Randall ^{[1
]}

Daniels, Tad ^{[3
]}

Hughes, Zachary ^{[1
]}

Hollander, Mathew ^{[1
,2
]}

Fanton, Mark ^{[1
]}

Snyder, David ^{[1
,4
]}

机构：

[1] Penn State Univ, Ctr Electroopt, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA

来源：

ACS NANO | 2010年 / 4卷 / 05期

关键词：

graphene; epitaxial graphene gate oxide; atomic layer deposition; Al(2)O(3); HfO(2); TiO(2); Ta(2)O(5); GATE; TRANSISTORS; OXIDES;

D O I：

10.1021/nn1003138

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al(2)O(3), HfO(2), TiO(2), and Ta(2)O(3) varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta(2)O(3), while the deposition if TiO(2) appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

引用

页码：2667 / 2672

页数：6

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