Polypropilene and silicon thin-film composite resistors

被引:1
作者
Gasanly, Sh. M. [1 ]
Imanova, A. Ya. [1 ]
Samedova, U. F. [1 ]
机构
[1] Natl Acad Sci Azerbaijan, Inst Phys, AZ-1143 Baku, Azerbaijan
关键词
Permittivity; -; Silicon;
D O I
10.3103/S1068375510020158
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
It is stated from the analysis of the received results that, in the studied composites, the value of the resistivity significantly decreases and the dielectric permittivity increases with the increasing of the time of action of the electric discharge.
引用
收藏
页码:165 / 168
页数:4
相关论文
共 10 条
[1]  
ABRAMOV RK, 1990, ELEKT OBRAB MAT, P51
[2]  
Bagirov M. A., 1987, ELEKT STARENIE POLIM
[3]  
BIDADI H, 2009, 7 INT C COMP SCI TEC, P150
[4]  
DZHUVARLY CM, 1977, ELEKT TEKHN, P6
[5]  
DZHUVARLY CM, 1983, ELEKT RAZRYAD GAZOVY
[6]  
GASANLI SM, 2007, 6 NATS K PRIM RENTG, P257
[7]  
HASANLI SM, 2009, 5 INT C TECHN PHYS P, P210
[8]   Zinc oxide- and polymer-based composite varistors [J].
Hashimov, A. M. ;
Hasanli, Sh. M. ;
Mehtizadeh, R. N. ;
Bayramov, Kh. B. ;
Azizova, Sh. M. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8, 2006, 3 (08) :2871-+
[9]   Simulation of the discharge process in a barrier discharge cell based on a three-parameter model [J].
Pikulev, A. A. ;
Tsvetkov, V. M. .
TECHNICAL PHYSICS, 2007, 52 (09) :1121-1126
[10]   Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors [J].
Souza, FL ;
Gomes, JW ;
Bueno, PR ;
Cassia-Santos, MR ;
Araujo, AL ;
Leite, ER ;
Longo, E ;
Varela, JA .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (02) :512-516