ZnO thin films were successfully prepared on boron-doped nanocrystalline diamond NCD by means of atomic layer chemical vapour deposition. Their growth and properties are similar to the layers grown by the same technique on glass. The layers thickness can be easily monitored by the number of precursors pulses. The ZnO layers are uniform and have perfect adhesion to NCD. Electrical measurements show that there is no current rectification if highly doped NCD and low resistance ALCVD ZnO are used. On the contrary, a rectifying behaviour can be obtained if lightly boron-doped NCD and resistive hydrothermally prepared ZnO are used. (c) 2006 Elsevier B.V. All rights reserved.
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Lamara, T
Belmahi, M
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Belmahi, M
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Elmazria, O
Le Brizoual, L
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
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Bougdira, J
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
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Rémy, M
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
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Alnot, P
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Lamara, T
Belmahi, M
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Belmahi, M
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Elmazria, O
Le Brizoual, L
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Le Brizoual, L
Bougdira, J
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Bougdira, J
Rémy, M
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France
Rémy, M
Alnot, P
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Univ Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, FranceUniv Nancy 1, CNRS, UMR 7040, Lab Phys Milieux Ion & Applicat, F-54506 Vandoeuvre Les Nancy, France