Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

被引：26

作者：

Cui, X. Y. ^{[1
]}

Carter, D. J. ^{[1
,2
]}

Fuchs, M. ^{[3
]}

Delley, B. ^{[4
]}

Wei, S. H. ^{[5
]}

Freeman, A. J. ^{[6
]}

Stampfl, C. ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[2] Curtin Univ Technol, Nanochem Res Inst, Perth, WA 6845, Australia

[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[4] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[5] Natl Renewable Energy Lab, Golden, CO 80401 USA

[6] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 15期

关键词：

MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; MACROSCOPIC POLARIZATION; HETEROJUNCTIONS; HETEROSTRUCTURES; PSEUDOPOTENTIALS; SPECTROSCOPY; OFFSETS; ALN;

D O I：

10.1103/PhysRevB.81.155301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on all-electron density-functional theory calculations using the generalized gradient approximation, we demonstrate the continuous tunability of the band gap and strength of the built-in electric field in GaN/AlN (0001) superlattices by control of the thickness of both the well (GaN) and barrier (AlN) regions. The effects of strain for these quantities are also studied. Calculations taking into account the self-interaction correction exhibit the same dependence on thickness. The calculated electric field strength values are in good agreement with recent experiments. Spontaneous polarization dominates the contribution to the electric field and the strain-induced piezoelectric polarization is estimated to contribute only about 5-10%.

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页数：5

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