Real-time observation of the dynamics of single Pb atoms on Si(111)-(7x7) by scanning tunneling microscopy

被引:133
作者
Gomezrodriguez, JM [1 ]
Saenz, JJ [1 ]
Baro, AM [1 ]
Veuillen, JY [1 ]
Cinti, RC [1 ]
机构
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE 9,FRANCE
关键词
D O I
10.1103/PhysRevLett.76.799
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The very early stages of Pb deposition on Si(111)-(7 x 7) surfaces have been investigated in real time by scanning tunneling microscopy. The combination of variable temperature scanning with unusual very long periods of imaging time have enabled us to observe that single Pb atoms are highly mobile within each half (7 x 7) unit cell. Individual jumps of single atoms between different half cells have been resolved as well as the formation of atom pairs as a result. An activation energy of 0.64 +/- 0.07 eV has been measured for the diffusion of single atoms between different half cells.
引用
收藏
页码:799 / 802
页数:4
相关论文
共 17 条
  • [1] SURFACE-DIFFUSION AND PHASE-TRANSITION ON THE GE(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY
    FEENSTRA, RM
    SLAVIN, AJ
    HELD, GA
    LUTZ, MA
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (25) : 3257 - 3260
  • [2] DIRECT MEASUREMENT OF DIFFUSION BY HOT TUNNELING MICROSCOPY - ACTIVATION-ENERGY, ANISOTROPY, AND LONG JUMPS
    GANZ, E
    THEISS, SK
    HWANG, IS
    GOLOVCHENKO, J
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (10) : 1567 - 1570
  • [3] SUBMONOLAYER PHASES OF PB ON SI(111)
    GANZ, E
    XIONG, FL
    HWANG, IS
    GOLOVCHENKO, J
    [J]. PHYSICAL REVIEW B, 1991, 43 (09): : 7316 - 7319
  • [4] GROWTH AND MORPHOLOGY OF PB ON SI(111)
    GANZ, E
    HWANG, IS
    XIONG, FL
    THEISS, SK
    GOLOVCHENKO, J
    [J]. SURFACE SCIENCE, 1991, 257 (1-3) : 259 - 273
  • [5] GOMEZRODRIGUEZ JM, IN PRESS
  • [6] MOBILE POINT-DEFECTS AND ATOMIC BASIS FOR STRUCTURAL TRANSFORMATIONS OF A CRYSTAL-SURFACE
    HWANG, IS
    THEISS, SK
    GOLOVCHENKO, JA
    [J]. SCIENCE, 1994, 265 (5171) : 490 - 496
  • [7] ADATOM DIFFUSION BY ORCHESTRATED EXCHANGE ON SEMICONDUCTOR SURFACES
    KAXIRAS, E
    ERLEBACHER, J
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (11) : 1714 - 1717
  • [8] KELLOG GL, 1994, SURF SCI REP, V21, P88
  • [9] REAL-TIME OBSERVATIONS OF VACANCY DIFFUSION ON SI(001)-(2X1) BY SCANNING-TUNNELING-MICROSCOPY
    KITAMURA, N
    LAGALLY, MG
    WEBB, MB
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (13) : 2082 - 2085
  • [10] OBSERVATION OF SURFACE RECONSTRUCTION ON SILICON ABOVE 800-DEGREES-C USING THE STM
    KITAMURA, S
    SATO, T
    IWATSUKI, M
    [J]. NATURE, 1991, 351 (6323) : 215 - 217