Dopant rearrangement and superconductivity in Bi2Sr2-xLaxCuO6 thin films under annealing

被引：3
作者：
Cancellieri, C. [1 ]
Lin, P. H.
Ariosa, D.
Pavuna, D.
机构：
[1] Ecole Polytech Fed Lausanne, Inst Phys Complex Matter, LPRX, CH-1015 Lausanne, Switzerland
[2] Acad Sinica, Inst Phys, Taipei, Taiwan
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 24期
关键词：
D O I：
10.1088/0953-8984/19/24/246214
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
By combining x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS) and AC susceptibility measurements we investigate the evolution of structural and superconducting properties of La-doped Bi-2201 thin films grown by pulsed laser deposition (PLD) under different annealing conditions. We find that the main effect of oxygen annealing is to improve the crystal coherence by enabling La cation migration to the Sr sites. This activates the desired hole doping. Short-time Ar annealing removes the interstitial oxygen between the BiO layers, fine adjusting the effective hole doping. The superconducting critical temperature is consequently enhanced. However, longer annealings result in phase separation and segregation of the homologous compound Bi-1201. We attribute this effect to the loss of Bi during the annealing.
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