GaAs micromachining for millimeter wave applications

被引：0

作者：

Müller, A ^{[1
]}

Constantinidis, G ^{[1
]}

Neculoiu, D ^{[1
]}

Vasilache, D ^{[1
]}

Lagadas, M ^{[1
]}

Deligeorgis, G ^{[1
]}

Iordanescu, S ^{[1
]}

机构：

[1] IMT Bucharest, Bucharest 72225, Romania

来源：

CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

micromachining; GaAs membranes; millimeter wave filters; millimeter wave receiver;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrate. The 2.2 gm thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semiinsulating [100] GaAs, is used as support for millimeter wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequency of 38 respectively 77 GHz as well as monolithic integrated millimeter wave receivers were designed and manufactured on GaAs micromachined substrate.

引用

页码：25 / 28

页数：4

共 8 条

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