Absence of Ferromagnetism in VSe2 Caused by Its Charge Density Wave Phase

被引:102
作者
Fumega, Adolfo O. [1 ,2 ]
Gobbi, M. [3 ]
Dreher, P. [3 ]
Wan, W. [3 ]
Gonzalez-Orellana, C. [3 ]
Pena-Diaz, M. [3 ]
Rogero, C. [3 ]
Herrero-Martin, J. [4 ]
Gargiani, P. [4 ]
Ilyn, M. [3 ]
Ugeda, M. M. [3 ]
Pardo, Victor [1 ,2 ]
Blanco-Canosa, S. [5 ,6 ]
机构
[1] Univ Santiago de Compostela, Dept Fis Aplicada, Campus Sur S-N, E-15782 Santiago De Compostela, Spain
[2] Univ Santiago de Compostela, Inst Invest Tecnol, Campus Sur S-N, E-15782 Santiago De Compostela, Spain
[3] Univ Basque Country, CSIC, Ctr Fis Mat, Paseo Manuel de Lardizabal 5, E-20018 Donostia San Sebastian, Gipzukoa, Spain
[4] ALBA Synchrotron Light Source, Barcelona 08290, Catalonia, Spain
[5] DIPC, Donostia San Sebastian 20018, Basque Country, Spain
[6] Basque Fdn Sci, IKERBASQUE, Bilbao 48013, Basque Country, Spain
基金
欧洲研究理事会;
关键词
TRANSITION-METAL DICHALCOGENIDES; BAND-STRUCTURES; SUPERLATTICES; TRANSPORT; MAGNETISM; DRIVEN;
D O I
10.1021/acs.jpcc.9b08868
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
How magnetism emerges in low-dimensional materials such as transition metal dichalcogenides at the monolayer limit is still an open question. Herein, we present a comprehensive study of the magnetic properties of single-crystal and monolayer VSe2, both experimentally and ab initio. Magnetometry, X-ray magnetic circular dichrosim (XMCD), and ab initio calculations demonstrate that the charge density wave in bulk stoichiometric VSe2.0 causes a structural distortion with a strong reduction in the density of states at the Fermi level, prompting the system toward a nonmagnetic state but on the verge of a ferromagnetic instability. In the monolayer limit, the structural rearrangement induces a Peierls distortion with the opening of an energy gap at the Fermi level and the absence of magnetic order. Control experiments on defect-induced VSe2-delta single crystals show a breakdown of magnetism, discarding vacancies as a possible origin of magnetic order in VSe2.
引用
收藏
页码:27802 / 27810
页数:9
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