Dynamic of the Optical Matrix Element in Type II GaAsSb/GaAs Quantum Dots for Laser Applications

被引：0

作者：

Ochalski, Tomasz J. ^{[1
]}

Gradkowski, Kamil ^{[1
,2
]}

Pavarelli, Nicola ^{[1
,2
]}

Willams, David P. ^{[1
]}

O'Reilly, Eoin P. ^{[1
]}

Huyet, Guillaume ^{[1
,2
]}

Tatebayashi, Jun ^{[3
]}

Huffaker, Diana L. ^{[3
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] Cork Inst Technol, Cork, Ireland

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Elect Engn, Los Angeles, CA USA

来源：

2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present time resolved photoluminescence supported by k.p modeling of type II quantum dots. In the measured spectra two effects were observed; an initially fast decay time rises dramatically as the number of carriers is depleted, which reduces the optical matrix element, and at the same time, a strong red shift of the emission wavelength is observed. (C)2009 Optical Society of America

引用

页码：898 / +

页数：2

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