Dynamic of the Optical Matrix Element in Type II GaAsSb/GaAs Quantum Dots for Laser Applications

被引：0
|
作者：
Ochalski, Tomasz J. [1 ]
Gradkowski, Kamil [1 ,2 ]
Pavarelli, Nicola [1 ,2 ]
Willams, David P. [1 ]
O'Reilly, Eoin P. [1 ]
Huyet, Guillaume [1 ,2 ]
Tatebayashi, Jun [3 ]
Huffaker, Diana L. [3 ]
机构：
[1] Tyndall Natl Inst, Cork, Ireland
[2] Cork Inst Technol, Cork, Ireland
[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Elect Engn, Los Angeles, CA USA
来源：
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present time resolved photoluminescence supported by k.p modeling of type II quantum dots. In the measured spectra two effects were observed; an initially fast decay time rises dramatically as the number of carriers is depleted, which reduces the optical matrix element, and at the same time, a strong red shift of the emission wavelength is observed. (C)2009 Optical Society of America
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页码：898 / +
页数：2
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