Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

被引：166
|
作者：
Zhang, H
Chung, SW
Mirkin, CA
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Inst Nanotechnol, Evanston, IL 60208 USA
来源：
NANO LETTERS | 2003年 / 3卷 / 01期
关键词：
D O I：
10.1021/nl0258473
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.
引用
收藏
页码：43 / 45
页数：3
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