Design of coils inductively-tuned RF MEMS shunt switches using novel modeling method

被引：0

作者：

Lei, XF ^{[1
]}

Liu, ZW ^{[1
]}

Li, ZJ ^{[1
]}

Chen, ZM ^{[1
]}

Liu, LT ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design of coils inductively-tuned RF MEMS shunt switches using novel modeling method is presented. In this model, both lumped elements and coplanar waveguide (CPW) are used in the electrical equivalent circuit due to the fact that the up-state capacitance is usually very small, and the CPW loss is a main contribution to the up-state insertion loss. The CPW is estimated less than 0.2dB at 0-10GHz in most case. The modeling method allows us to simulate the RF switch more efficiently compare to that with the commercial FEM CAD tools. Using this model, optimized switches with tuning coils operation at S-band are obtained. The isolation of the switches is 23dB@4GHz and 16dB@2.4GHz respectively. The modeling results are verified by using HFSS simulation.

引用

页码：1739 / 1742

页数：4

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