Impact of underlap and mole-fraction on RF performance of strained-Si/Si1-xGex/strained-Si DG MOSFETs

被引：6

作者：

Dutta, Arka ^{[1
]}

Koley, Kalyan ^{[1
]}

Sarkar, Chandan K. ^{[1
]}

机构：

[1] Jadavpur Univ, Nano Device Simulat Lab, Dept Elect & Telecommun Engn, Kolkata 700032, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 75卷

关键词：

Under lap DG-nMOSFET; RF performance; Strained silicon; Non quasi static effect; STRAINED SI; DOUBLE-GATE; CAPACITANCE; MOBILITY; DEVICES; MODEL;

D O I：

10.1016/j.spmi.2014.09.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (C-gs and C-gd) and resistance (R-gs and R-gd), the transport delay (tau(m)), the intrinsic inductance (L-sd), the cut-off frequency (f(T)), and the maximum oscillation frequency (f(MAX)). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (chi). (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：634 / 646

页数：13

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