Impact of underlap and mole-fraction on RF performance of strained-Si/Si1-xGex/strained-Si DG MOSFETs

In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (C-gs and C-gd) and resistance (R-gs and R-gd), the transport delay (tau(m)), the intrinsic inductance (L-sd), the cut-off frequency (f(T)), and the maximum oscillation frequency (f(MAX)). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (chi). (C) 2014 Elsevier Ltd. All rights reserved.