Defects and degradation in wide gap II-VI based structures and light-emitting devices

被引：4

作者：

Guha, S ^{[1
]}

Petruzzello, J

机构：

[1] 3M Co, Corp Res Labs, St Paul, MN 55144 USA

[2] Philips Elect N Amer Corp, Philips Labs, Briarcliff Manor, NY 10510 USA

来源：

II-VI BLUE/GREEN LIGHT EMITTERS : DEVICE PHYSICS AND EPITAXIAL GROWTH | 1997年 / 44卷

关键词：

D O I：

10.1016/S0080-8784(08)60197-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：271 / 318

页数：48

共 38 条

[1]

[Anonymous], UNPUB

[2]

Brown P. D., 1987, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, P123

[3] 1/2(100)(100) DISLOCATION LOOPS IN A ZINC BLENDE STRUCTURE [J].

CHU, SNG ;

NAKAHARA, S .

APPLIED PHYSICS LETTERS, 1990, 56 (05) :434-436

[4]

DEPUYDT JM, 1988, J APPL PHY, V52, P4756

[5] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[6]

GAINES JM, 1993, J APPL PHYS, V73, P835

[7] ROLE OF THE INITIAL GROWTH MODE ON THE DISLOCATION-STRUCTURE IN MBE GROWN ZNSE/GAAS(100) [J].

GUHA, S ;

MUNEKATA, H ;

CHANG, LL ;

TANG, WC .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :308-313

[8] (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

CHENG, H ;

HAASE, MA ;

DEPUYDT, JM ;

QIU, J ;

WU, BJ ;

HOFLER, GE .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :801-803

[9] STRUCTURAL QUALITY AND THE GROWTH MODE IN EPITAXIAL ZNSE/GAAS(100) [J].

GUHA, S ;

MUNEKATA, H ;

CHANG, LL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2294-2300

[10] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

DEPUYDT, JM ;

HAASE, MA ;

QIU, J ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109

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