Radiation effects in ultraviolet sensitive SiC photodiodes

被引：0

作者：

Metzger, S ^{[1
]}

Henschel, H ^{[1
]}

Köhn, O ^{[1
]}

Lennartz, W ^{[1
]}

机构：

[1] Fraunhofer INT, D-53879 Euskirchen, Germany

来源：

FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50 % of its initial value at a total gamma dose of 40 kGy(Air). Nearly the same decrease was observed during proton irradiations of 9 x 10(12) cm(-2). But after a neutron fluence of 1.5 x 10(13) cm(-2) the signal was still 85 % of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the colour-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20 %.

引用

页码：457 / 460

页数：4

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