Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

We report Si/InP core-shell nanowire radial heterojunction array based solar cell. Silicon nanowire (SiNW) arrays were fabricated by room temperature metal assisted chemical etching method on a p-type Si (100) wafer using silver nanoparticles whereas n-InP layer, as a shell, was deposited onto the SiNW arrays by atmospheric pressure metal organic chemical vapor deposition to obtain core-shell radial heterojunctions. A 100 nm transparent conductive oxide layer was deposited onto top of n-InP layer by sputtering. Transmission electron microscope images confirm the formation of Si/InP core-shell radial nanowire heterostructure. From the studies of reflectance spectroscopy, higher absorption of visible photons has been found. Current-voltage measurements on the radial core-shell nanowire heterojunction based solar cell have been taken under dark and an AM 1.5 solar radiation at room temperature. The device is found to provide a conversion efficiency of 4.39% with an open circuit voltage of 0.56 V and a short circuit current density 14.26 mA/cm(2) under AM 1.5 solar radiation. The core-shell radial heterojunction solar cell on nanowire arrays shows great improvement of the performance in comparison with conventional nanowire based solar cells. Our study provides new insights into the Si/InP core-shell nanowire based heterojunction which can have potential applications in fabricating nanoscale optoelectronic devices on Si platform.