One-phonon resonant electron Raman scattering in a cylindrical semiconductor quantum dot

被引:14
作者
Zhong, Q. -H. [1 ]
机构
[1] JiaYing Univ, Sch Phys & Opt Informat Sci, Meizhou 514015, Guangdong, Peoples R China
关键词
VIBRATIONAL-MODES; LUMINESCENCE; DEPENDENCE; LASERS; STATES; ALAS;
D O I
10.1140/epjb/e2010-00122-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the surface optical (SO) phonon modes in semiconductor quantum dots (QDs). We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities are found to be sensitively size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.
引用
收藏
页码:451 / 456
页数:6
相关论文
共 34 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
    ARAKAWA, Y
    SAKAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
  • [3] Quantum dot lasers: breakthrough in optoelectronics
    Bimberg, D
    Grundmann, M
    Heinrichsdorff, F
    Ledentsov, NN
    Ustinov, VM
    Zhukov, AE
    Kovsh, AR
    Maximov, MV
    Shernyakov, YM
    Volovik, BV
    Tsatsul'nikov, AF
    Kop'ev, PS
    Alferov, ZI
    [J]. THIN SOLID FILMS, 2000, 367 (1-2) : 235 - 249
  • [4] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES
    BOCKELMANN, U
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1990, 42 (14): : 8947 - 8951
  • [5] Chamberlain M P, 1995, PHYS REV B, V51, P3
  • [6] Chen CY, 1998, PHYSICA B, V245, P92, DOI 10.1016/S0921-4526(97)83087-6
  • [7] INTERBAND-INTRABAND ELECTRONIC RAMAN-SCATTERING IN SEMICONDUCTORS
    COMAS, F
    GINER, CT
    PEREZALVAREZ, R
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (32): : 6479 - 6488
  • [8] Electron states and luminescence transition in porous silicon
    Dorigoni, L
    Bisi, O
    Bernardini, F
    Ossicini, S
    [J]. PHYSICAL REVIEW B, 1996, 53 (08): : 4557 - 4564
  • [9] Phonons in GaP quantum dots
    Fu, HX
    Ozolins, V
    Zunger, A
    [J]. PHYSICAL REVIEW B, 1999, 59 (04): : 2881 - 2887
  • [10] Enhancement of Coulomb interactions in semiconductor nanostructures by dielectric confinement
    Goldoni, G
    Rossi, F
    Orlandi, A
    Rontani, M
    Manghi, F
    Molinari, E
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 6 (1-4) : 482 - 485